EUV- and X-Ray-Sources

The EUV radiation for exposing semiconductor structures is usually generated by focusing a multiple kilowatt (kW) laser beam on a jet of liquid metal droplets in a vacuum. The photo shows a plasma of a discharge generated plasma.
© Photo Fraunhofer ILT, Aachen.

The EUV radiation for exposing semiconductor structures is usually generated by focusing a multiple kilowatt (kW) laser beam on a jet of liquid metal droplets in a vacuum. The photo shows a plasma of a discharge generated plasma.

When extreme ultraviolet and soft x-ray radiation is generated in the spectral range between 1 nm and 50 nm from dense, hot plasmas, powerful radiation sources can be designed in a compact size. In this context, Fraunhofer ILT is investigating both laser-produced (LPP) and discharge-produced plasmas (DPP).

For applications that require a particularly high brilliancy of the source, laser-produced plasmas are preferred. Discharge-produced plasmas, on the other hand, are characterized by their high efficiency in converting electrical energy into EUV light, their simple construction and, therefore, their cost-effectiveness.

ILT develops radiation sources that are nowadays used in EUV lithography to produce chips, to characterize optical systems and diagnostics, to test the service life of multilayer mirrors or to conduct defect inspection.

 

Your contacts at the institutes are:

Contact Press / Media

Dr. rer. nat. Klaus Bergmann

Fraunhofer Institute for Laser Technology
Steinbachstr. 15
52074 Aachen

Phone +49 241 8906-302

Fax +49 241 8906-121