X-ray Sources

The EUV radiation for exposing semiconductor structures is usually generated by focusing a multiple kilowatt (kW) laser beam on a jet of liquid metal droplets in a vacuum. The photo shows a plasma of a discharge generated plasma.
© Fraunhofer ILT

The EUV radiation for exposing semiconductor structures is usually generated by focusing a multiple kilowatt (kW) laser beam on a jet of liquid metal droplets in a vacuum. The photo shows a plasma of a discharge generated plasma.

Extreme ultraviolet and soft x-ray radiation in the spectral range between 1 nm and 50 nm from dense, hot plasmas makes it possible to construct compact powerful radiation sources. Fraunhofer ILT examines both laser-produced (LPP) and discharge-produced plasmas (DPP). For applications that require, in particular, a highly brilliant source, LPPs are preferred. In contrast, discharge-produced plasmas are distinguished by their high efficiency in converting electrical energy into EUV light, their simple construction and are, therefore, a more cost-effective alternative.

The Fraunhofer ILT develops radiation sources in the X-ray and EUV range which are used, for example, in lithography and measurement technology to produce chips, where the focus is on characterizing optical systems and diagnostics, to conduct service-life tests of multilayer mirrors or to inspect for defects.

Your contacts at the institutes are:

Contact Press / Media

Dr. rer. nat. Klaus Bergmann

Fraunhofer Institute for Laser Technology
Steinbachstr. 15
52074 Aachen

Phone +49 241 8906-302

Fax +49 241 8906-121